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OMS410 OMS410A OMS510
3 PHASE, LOW VOLTAGE, LOW RDS(on), MOSFET BRIDGE CIRCUIT IN A PLASTIC PACKAGE
Three Phase, 100 Volt, 15 To 45 Amp Bridge With Current And Temperature Sensing In A Low Profile Package
FEATURES
* * * * * * Three Phase Power Switch Configuration Zener Gate Protection 10 Miliohm Shunt Resistor Linear Thermal Sensor Isolated Low Profile Package Output Currents Up To 45 Amps
DESCRIPTION
This series of MOSFET switches is configured in a 3 phase bridge with a common VDD line, precision series shunt resistor in the source line, and a sensing element to monitor the substrate temperature. This device is ideally suited for Motor Control applications where size, performance, and efficiency are key.
2.1
MAXIMUM RATINGS (@ 25C)
Part Number OMS410 OMS410A OMS510 VDS (Volts) 100 100 100 RDS(on) (m ) 85 85 42 ID (Amps) 15 20 45 Package MP-3 MP-3 MP-3
SCHEMATIC
2 1 6 5 10 9 32, 33, 34
21 22
29, 30, 31 26, 27, 28 23, 24, 25
15,16,17 18,19, 20 34 78 1112 13 14
4 11 R0
2.1 - 53
OMS410, OMS410A, OMS510 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Parameter VDS VDGR ID @ TC = 25C ID @ TC = 70C IDM PD @ TC = 25C PD @ TC = 70C Drain-Source Voltage Drain-Gate Voltage (RGS = 1 m ) Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Dissipation 2 OMS410 100 100 15 11 110 33 18 0.33 3.0 0.010 OMS410A 100 100 20 16 110 33 18 0.33 3.0 0.010 OMS510 100 100 45 45 180 66 36 0.66 1.5 0.010 Units V V A A A W W W/C C/W Ohms
Maximum Power
Maximum Power Dissipation 2
Junction-To-Case Linear Derating Factor Thermal Resistance Junction-To-Case Sense Resistor
Note 1: Pulse Test: Pulse width 300 sec. Duty Cycle 1.5%. Note 2: Maximum Junction Temperature equal to 125C.
ELECTRICAL CHARACTERISTICS: OMS410 (TC = 25 unless otherwise specified)
Characteristic Test Conditions Symbol Min. Typ. Max. Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage, ID = 250 A, VGS = 0 Zero Gate Voltage Drain Current = VGS, VDS = Max. Rat. VDS = Max. Rat. x 0.8, TC = 70C Gate-Body Leakage, VGS = 12 V VBRDSS IDSS IGSS 100 10 100 500 V A A nA
2.1
ON CHARACTERISTICS
Gate-Threshold Voltage, VDS = VGS, ID = 250 A Static Drain-Source On-Resistance, VGS = 10 Vdc, ID = 9.0 A Static Drain-Source On-Resistance TC = 70C On State Drain Current, VDS > ID(on) X RDS(on) Max., VGS = 10 IDon VGSth RDSon 2.0 15 4.0 0.058 0.1 A V
DYNAMIC CHARACTERISTICS
Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS > ID(on) X RDS(on) Max., ID = 9.0 A, VDS = 25 V, VGS = 0, f = 1.0 mHz gfs Ciss Coss Crss 9.0 2600 910 350 mho pF pF pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDD = 100 V, ID = 15 A, RGS = 10 , VGS = 10 V tdon tr tdoff tf 35 290 85 120 ns ns ns ns
SOURCE DRAIN DIODE CHARACTERISTICS
Source - Drain Current Source - Drain Current (Pulsed) Forward On-Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 28 A, VGS = 0, ISD = 13 A, di/dt = 100 A/Sec ISD ISDM* VSD trr Qrr 133 0.85 14 56 2.5 A A V ns C
RESISTOR CHARACTERISTICS
Resistor Tolerance Temperature Coefficient, -40C to +70C RS Tcr 9.0 10 100 11 m ppm
* Indicates Pulse Test 300 sec, Duty Cycle 1.5%
2.1 - 54
OMS410, OMS410A, OMS510
ELECTRICAL CHARACTERISTICS: OMS520 (TC = 25 unless otherwise specified)
Characteristic Symbol Min. Typ. Max. Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage, ID = 250 A, VGS = 0 Zero Gate Voltage Drain Current = VGS, VDS = Max. Rat. VDS = Max. Rat. x 0.8, TC = 70C Gate-Body Leakage, VGS = 12 V IGSS V(BRDSS IDSS 100 10 100 500 V A A nA
ON CHARACTERISTICS
Gate-Threshold Voltage, VDS = VGS, ID = 250 A Static Drain-Source On-Resistance, VGS = 10 Vdc, ID = 10 A Static Drain-Source On-Resistance TC = 70C On State Drain Current, VDS > ID(on) X RDS(on) Max., VGS = 10 ID(on) VGS(th) RDS(on) 2.0 20 4.0 0.058 0.100 A V
DYNAMIC CHARACTERISTICS
Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS > ID(on) X RDS(on) Max., ID = 10 A VDS = 25 V, VGS = 0, f = 1.0 mHz gfs Ciss Coss Crss 9.0 2600 910 350 mho pF pF pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDD = 100 V, ID = 20 A, RGS = 10 , VGS = 10 V td(on) tr td(off) tf 35 290 85 120 ns ns ns ns
SOURCE DRAIN DIODE CHARACTERISTICS
Source - Drain Current Source - Drain Current (Pulsed) Forward On-Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 28 A, VGS = 0, ISD = 20 A, di/dt = 100 A/Sec ISD ISDM* VSD trr Qrr 133 0.85 20 56 2.5 A A V ns C
2.1
RESISTOR CHARACTERISTICS
Resistor Tolerance Temperature Coefficient, -40C to +70C RS Tcr 9.0 10 100 11 m ppm
* Indicates Pulse Test 300 sec, Duty Cycle 1.5%.
2.1 - 55
OMS410, OMS410A, OMS510
ELECTRICAL CHARACTERISTICS: OMS510 (TC = 25 unless otherwise specified)
Characteristic Symbol Min. Typ. Max. Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage, ID = 250 A, VGS = 0 Zero Gate Voltage Drain Current = VGS, VDS = Max. Rat. VDS = Max. Rat. x 0.8, TC = 70C Gate-Body Leakage, VGS = 12 V IGSS V(BRDSS IDSS 100 20 200 500 V A A nA
ON CHARACTERISTICS
Gate-Threshold Voltage, VDS = VGS, ID = 250 A Static Drain-Source On-Resistance, VGS = 10 Vdc, ID = 22.5 A Static Drain-Source On-Resistance TC = 70C On State Drain Current, VDS > ID(on) X RDS(on) Max., VGS = 10 ID(on) VGS(th) RDS(on) 2.0 45 4.0 0.029 0.050 A V
DYNAMIC CHARACTERISTICS
Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS > ID(on) X RDS(on) Max., ID = 40 A VDS = 100 V, VGS = 0, f = 1.0 mHz gfs Ciss Coss Crss 18 5200 1820 700 mho pF pF pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDD = 100 V, ID = 45 A, RGS = 10 , VGS = 10 V, td(on) tr td(off) tf 70 580 170 240 ns ns ns ns
SOURCE DRAIN DIODE CHARACTERISTICS
Source - Drain Current Source - Drain Current (Pulsed) Forward On-Voltage Reverse Recovery Time ISD = 45 A, VGS = 0, ISD = 45 A, di/dt = 100 A/Sec ISD ISDM* VSD trr Qrr 240 1.605 45 120 2.5 A A V ns C
2.1
Reverse Recovered Charge
RESISTOR CHARACTERISTICS
Resistor Tolerance Temperature Coefficient, -40C to +70C RS Tcr 9.0 10 100 11 m ppm
* Indicates Pulse Test 300 sec, Duty Cycle 1.5%.
Mechanical Outline
.600 2.000 1.350 .325 .150 (4) PLCS. .250 .500
. 35 1
.050 (34) PLCS.
1
.150
2.450
3.000
4.000
.300 .500 .360 .020 .360 MAX. .180
.250
Pin 1: Pin 2: Pin 3: Pin 4: Pin 5: Pin 6: Pin 7: Pin 8: Pin 9: Pin 10: Pin 11: Pin 12: Pin 13: Pin 14: Pin 15: Pin 16: Pin 17:
Gate Q1 Source Q1 Gate Q2 Source Q2 Gate Q3 Source Q3 Gate Q4 Source Q4 Gate Q5 Source Q5 Gate Q6 Source Q6 +Sense Res. -Sense Res. Power GND Power GND Power GND
Pin 34: VDD Pin 33: VDD Pin 32: VDD Pin 31: Output Phase A Pin 30: Output Phase A Pin 29: Output Phase A Pin 28: Output Phase B Pin 17: Output Phase B Pin 26: Output Phase B Pin 25: Output Phase C Pin 24: Output Phase C Pin 23: Output Phase C Pin 22: +PTC Pin 21: -PTC Pin 20: Power GND Pin 19: Power GND Pin 18: Power GND
Notes: *Contact factory for lead bending options. *Mounting Recommendations: Maximum Mounting Torque: 3.0 mN. The module must be attached to a flat heat sink (flatness 100mm maximum).
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246

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